march 2013 FDB110N15A n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDB110N15A rev. c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter FDB110N15A unit v dss drain to source voltage 150 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c) 92 a -continuous (t c = 100 o c) 65 i dm drain current - pulsed (note 1) 369 a e as single pulsed avalanche energy (note 2) 365 mj dv/dt peak diode recovery dv/dt (note 3) 6v/ns p d power dissipation (t c = 25 o c) 234 w - derate above 25 o c1.56w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDB110N15A unit r jc thermal resistance, junction to case, max. 0.64 o c/w r ja thermal resistance, junction to ambient, max. 62.5 FDB110N15A n-channel powertrench ? mosfet 150 v, 92 a, 11 m features ?r ds(on) = 9.25 m ( typ.) @ v gs = 10 v, i d = 92 a ? fast switching speed ? low gate charge ? high performance trench tech nology for extremely low r ds(on) ? high power and current handling capability ?rohs compliant description this n-channel mosfet is produced using fairchild semiconductor ? ?s advance powertrench ? process that has been tailored to minimize the on-state resistance while maintain- ing superior switching performance. applications ? synchronous rectification for atx / server / telecom psu ? battery protection circuit ? motor drives and uninterruptible power supplies ? micro solar inverter g s d d 2 -pak (to263) g s d
FDB110N15A n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2011 fairchild semiconductor corporation FDB110N15A rev. c0 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDB110N15A FDB110N15A d2-pak 330mm 24mm 800 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 150 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.09 - v/ o c i dss zero gate voltage drain current v ds = 120v, v gs = 0v - - 1 a v ds = 120v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.0-4.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 92a - 9.25 11.0 m g fs forward transconductance v ds = 10v, i d = 92a -118-s c iss input capacitance v ds = 75v, v gs = 0v f = 1mhz - 3390 4510 pf c oss output capacitance - 334 445 pf c rss reverse transfer capacitance - 14 - pf c oss (er) engry releted output capacitance v ds = 75v, i d = 92a - 583 - pf q g(tot) total gate charge at 10v v gs = 10v, v ds = 75v i d = 92a (note 4) -4761nc q gs gate to source gate charge - 16 - nc q gs2 gate charge threshold to plateau - 7.9 - nc q gd gate to drain ?miller? charge - 9.7 - nc t d(on) turn-on delay time v dd = 75v, i d = 92a v gs = 10v, r gen = 4.7 (note 4) -2560ns t r turn-on rise time - 26 62 ns t d(off) turn-off delay time - 46 102 ns t f turn-off fall time - 14 38 ns esr equivalent series resistance (g-s) f = 1mhz - 2.5 - i s maximum continuous drain to source diode forward current - - 92 a i sm maximum pulsed drain to source diode forward current - - 369 a v sd drain to source diode forward voltage v gs = 0v, i sd = 92a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 92a, v dd = 75v di f /dt = 100a/ s -89-ns q rr reverse recovery charge - 255 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 3mh, i as = 15.6a, r g = 25 , starting t j = 25 c 3. i sd 92a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDB110N15A n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2011 fairchild semiconductor corporation FDB110N15A rev. c0 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 234567 1 10 100 500 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 10 5 10 100 500 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 6.5v 6.0v 5.5v 5.0v 0.0 0.3 0.6 0.9 1.2 1.5 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 50 100 150 200 250 300 350 8 12 16 20 24 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0 1020304050 0 2 4 6 8 10 *note: i d = 92a v ds = 30v v ds = 75v v ds = 120v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 200 10 100 1000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FDB110N15A n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2011 fairchild semiconductor corporation FDB110N15A rev. c0 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 92a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 20 40 60 80 100 v gs = 10v i d , drain current [a] t c , case temperature [ o c ] r jc = 0.64 o c/w 0.1 1 10 100 300 0.01 0.1 1 10 100 1000 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 0 25 50 75 100 125 150 0 1 2 3 4 e oss , [ j ] v ds , drain to source voltage [ v ]
FDB110N15A n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2011 fairchild semiconductor corporation FDB110N15A rev. c0 typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.64 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDB110N15A n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2011 fairchild semiconductor corporation FDB110N15A rev. c0 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDB110N15A n-channel powertrench ? mosfet www.fairchildsemi.com 7 ?2011 fairchild semiconductor corporation FDB110N15A rev. c0 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDB110N15A n-channel powertrench ? mosfet www.fairchildsemi.com 8 ?2011 fairchild semiconductor corporation FDB110N15A rev. c0 mechanical dimensions d 2 pak dimensions in millimeters
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